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  Datasheet File OCR Text:
 Ordering number:ENN6324
PNP/NPN Epitaxial Planar Silicon Transistors
2SA608N/2SC536N
Low-Frequency General-Purpose Amplifier Applications
Applications
* Capable of being used in the low frequency to high frequency range.
Package Dimensions
unit:mm 2164
[2SA608N/2SC536N]
4.5 3.7
Features
* Large current capacity and wide ASO.
0.45
3.5
1.4max
0.6
1.27
4.0max 13.7 14.0
0.5
0.45
4.5
0.44
1 2.5
2 2.5
3
( ) : 2SA608N
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1 : Emitter 2 : Collector 3 : Base SANYO : NPA-WA
Ratings (-50)60 (-)50 (-)6 (-)150 (-)400 500 150 -55 to +150
Unit V V V mA mA mW
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=(-)40V, IE=0 VEB=(-)5V, IC=0 VCE=(-)6V, IC=(-)1mA VCE=(-)6V, IC=(-)0.1mA 160* 70 Conditions Ratings min typ max (-)0.1 (-)0.1 560* Unit A A
Continued on next page. * The 2SA608N/2SC536N are classified by 1mA hFE as follow
Rank hFE F 160 to 320 G 280 to 560
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-2543 No.6324-1/4
2SA608N/2SC536N
Continued on preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol fT Cob VCE(sat) VBE(sat) Conditions VCE=(-)6V, IC=(-)10mA VCB=(-)6V, f=1MHz IC=(-)100mA, IB=(-)10mA IC=(-)100mA, IB=(-)10mA (-)60 (-)50 (-)6 Ratings min typ 200 3.0 (4.5) (-)0.3 (-)1.0 max Unit MHz pF pF V V V V V
V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)10A, IC=0
--16
IC -- VCE
A --50 A --45 A --40 A --35
2SA608N
Collector Current, IC - mA
20
IC -- VCE
50A 45A
40A
2SC536N
Collector Current, IC - mA
16
--12
--8
A --30 --25A
--20A --15A
35A
12
30A
25A
8
20A
15A
--4
--10A --5A
4
10A 5A
IB=0
40 50 IT00497
0 0 --10 --20 --30 --40
IB=0
--50 IT00496
0 0
10
20
30
Collector-to-Emitter Voltage, VCE - V
--240
Collector-to-Emitter Voltage, VCE - V
240
IC -- VBE
2SA608N VCE=--6V
Collector Current, IC - mA
IC -- VBE
2SC536N VCE=6V
--200
200
Collector Current, IC - mA
--160
160
--120
120
Ta=7 5C 25C --25 C
--40
40
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT00498
0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT00499
Base-to-Emitter Voltage, VBE - V
1000 7 5
Base-to-Emitter Voltage, VBE - V
1000
hFE -- IC
2SA608N VCE=--6V
hFE -- IC
2SC536N VCE=6V
7 5
DC Current Gain, hFE
DC Current Gain, hFE
3 2
Ta=75C
3 2
Ta=75C
--25C
100 7 5 3 2
25C
100 7 5 3 2
--25C
10 --0.1 2 3 5 7--1.0 2 3
10
Collector Current, IC - mA
5 7 --10
23
5 7--100 2 3
57 --1000 IT00500
0.1
23
5 7 1.0
23
Collector Current, IC - mA
5 7 10
23
25C --25 C
--80
80
Ta=75
C
25C
5 7 100
23
5 7 1000 IT00501
No.6324-2/4
2SA608N/2SC536N
1000
f T -- IC
2SA608N VCE=--6V
1000
f T -- IC
2SC536N VCE=6V
Gain-Bandwidth Product, fT - MHz
5 3 2
Gain-Bandwidth Product, fT - MHz
7
7 5 3 2
100 7 5 3 2
100 7 5 3 2
10 --1.0
2
3
5 7 --10
2
3
Collector Current, IC - mA
5 7 --100
2
3
5 7--1000 IT00502
10 1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC - mA
100 7 5
5 7 1000 IT00503
100 7 5
Cob -- VCB
2SA608N f=1MHz
Cob -- VCB
2SC536N f=1MHz
Output Capacitance, Cob - pF
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT00504
Output Capacitance, Cob - pF
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT00505
Collector-to-Base Voltage, VCB -- V
Collector-to-Base Voltage, VCB -- V
1.0 7
--1.0 7
VCE(sat) -- IC
2SA608N IC / IB=--10
Collector-to-Emitter Saturation Voltage, VCE (sat) - V
VCE(sat) -- IC
2SC536N IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE (sat) - V
5 3 2
5 3 2
--0.1 7 5 3 2
0.1 7 5 3 2 0.01
--0.01 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3
Collector Current, IC - mA
1000 7 5
5 7--1000 IT00506
1.0
2
3
5 7 10
2
3
5 7 100
2
3
ASO
Collector Current, IC - mA
600
5 7 1000 IT00507
PC -- Ta
ICP IC
2SA608N / 2SC536N For PNP, the polarity is reversed.
10
10
2SA608N / 2SC536N
Collector Dissipation, PC - mW
500
Collector Current, IC - mA
3 2 100 7 5 3 2 10 7 5 3 2 5 7 1.0 2 3 5 7 10
ms
DC
0m
400
s
op
era
tio
n
300
200
100
0 2 3 5
Collector-to-Emitter Voltage, VCE - V
7 100 IT00511
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta - C
IT00510
No.6324-3/4
2SA608N/2SC536N
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice.
PS No.6324-4/4


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